2SA2046 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – SILICON PNP EPITAXIAL PLANER TYPE

Transistors
2SA2046
Silicon PNP epitaxial planer type
For DC-DC converter
I Features
• Low collector to emitter saturation voltage V_CE(sat)
• Mini3-G1 type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation ^*
Junction temperature
Storage temperature
V_CBO
−30
V
V_CEO
−20
V
V_EBO
−5
V
I_CP
−5
A
I_C
−1.5
A
P_C
400
mW
T_j
150
°C
T_stg
−55 to +150
°C
Note) *: Measure on the ceramic substrate at 15 × 15 × 0.6 mm³
1.45
0.40⁺−^00..1005
3
Unit: mm
0.16⁺−^00..1006
1
2
0.95 0.95
1.90±0.20
2.90⁺−^00..2005
10°
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Type Package
Marking Symbol: 3Z
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio ^*
Collector to emitter saturation voltage ^*
Collector output capacitance
Transition frequency
Symbol
V_CBO
V_CEO
V_EBO
h_FE
V_CE(sat)
C_ob
f_T
Conditions
I_C = −10 µA, I_E = 0
I_C = −1 mA, I_B = 0
I_E = −10 µA, , I_C = 0
V_CE = −2 V, I_C = −100 mA
I_C = −500 mA, I_B = −25 mA
V_CB = −10 V, I_E = 0, f = 1 MHz
V_CB = −10 V, I_E = 20 mA
f = 200 MHz
Note) *: Pulse measurement
Min Typ Max Unit
−30
V
−20
V
−5
V
160
560
−50 −150 mV
25 35
pF
170
MHz
1