2SA2021 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistors
2SA2021
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC5609
I Features
• High foward current transfer ratio h_FE
• SSS-mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V_CBO
−60
V
V_CEO
−50
V
V_EBO
−7
V
I_CP
−200
mA
I_C
−100
mA
P_C
100
mW
T_j
125
°C
T_stg
−55 to +125
°C
0.33^{+–00..0025}
3
0.23^{+–00..0025}
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5˚
Unit: mm
0.10^{+–00..0025}
1: Base
2: Emitter
3: Collector
SSS Mini Type Package (3-pin)
Marking Symbol: 3E
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Collector output capacitance
Transition frequency
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE
V_CE(sat)
C_ob
f_T
V_CB = −20 V, I_E = 0
V_CE = −10 V, I_B = 0
I_C = −10 µA, I_E = 0
−60
I_C = −100 µA, I_B = 0
−50
I_E = −10 µA, I_C = 0
−7
V_CE = −10 V, I_C = −2 mA
180
I_C = −100 mA, I_B = −10 mA
V_CB = −10 V, I_E = 0, f = 1 MHz
V_CB = −10 V, I_E = 1 mA, f = 200 MHz
Typ Max
− 0.1
−100
− 0.3
2.7
80
390
− 0.5
Unit
µA
µA
V
V
V
V
pF
MHz
1