2SA2010 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistors
2SA2010
Silicon PNP epitaxial planer type
For DC-DC converter
For various driver circuits
0.40^{+–00..0150}
3
Unit: mm
0.16^{+–00..0160}
I Features
• Low collector to emitter saturation voltage V_CE(sat) , large current
capacitance
• High-speed switching
• Mini type 3-pin package, allowing downsizing and thinning of the
equipment.
• Complementary pair with 2SC5592
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10°
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation ^*
Junction temperature
Storage temperature
V_CBO
−15
V
V_CEO
−15
V
V_EBO
−5
V
I_CP
−10
A
I_C
−2.5
A
P_C
600
mW
T_j
150
°C
T_stg
−55 to +150
°C
Note) _*: Measure on the ceramic substrate at 15 × 15 × 0.6 mm³.
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini Type Package (3-pin)
Marking Symbol: AS
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio ^*1
Collector to emitter saturation voltage ^*1
I_CBO
V_CBO
V_CEO
V_EBO
h_FE1
h_FE2
V_CE(sat)
Collector output capacitance
C_ob
Transition frequency
f_T
Turn-on time ^*2
t_on
Storage time ^*2
t_stg
Turn-off time ^*2
t_off
V_CB = −10 V, I_E = 0
I_C = −10 µA, I_E = 0
I_C = −1 mA, I_B = 0
I_E = −10 µA, I_C = 0
V_CE = −2 V, I_C = −100 mA
V_CE = −2 V, I_C = −2.5 A
I_C = −1 A, I_B = −10 mA
I_C = −2.5 A, I_B = −50 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
V_CB = −10 V, I_E = 50 mA
f = 200 MHz
Note) *1: Rank classification
*2: Reference to the measurement circuit.
Min Typ Max
− 0.1
−15
−15
−5
200
560
100
−140
−270 −320
40
180
Unit
µA
V
V
V
mV
mV
pF
MHz
35
ns
110
ns
10
ns
1