2SA2009 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistors
2SA2009
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
I Features
• High collector to emitter voltage V_CEO
• Low noise voltage NV
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V_CBO
−120
V
V_CEO
−120
V
V_EBO
−5
V
I_CP
−50
mA
I_C
−20
mA
P_C
150
mW
T_j
150
°C
T_stg
−55 to +150
°C
0.3^{+–00..01}
3
Unit: mm
0.15^{+–00..0150}
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
S Mini Type Package (3-pin)
Marking Symbol: AR
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio ^*
Collector to emitter saturation voltage
Noise voltage
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE
V_CE(sat)
NV
Transition frequency
f_T
V_CB = −50 V, I_E = 0
−100 nA
V_CE = −50 V, I_B = 0
−1
µA
I_C = −10 µA, I_E = 0
−120
V
I_C = −1 mA, I_B = 0
−120
V
I_E = −10 µA, I_C = 0
−5
V
V_CE = −5 V, I_C = −2 mA
180
700
I_C = −20 mA, I_B = −2 mA
− 0.6 V
V_CE = −40 V, I_C = −1 mA, G_V = 80 dB
130
mV
R_g = 100 kW, Function = FLAT
V_CB = −5 V, I_E = 2 mA, f = 200 MHz
120
MHz
Note) *: Rank classification
Rank
R
S
T
h_FE
180 to 360 260 to 520 360 to 700
1