2SA2004 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Power Transistors
2SA2004
Silicon PNP epitaxial planer type
For power amplification
I Features
• High forward current transfer ratio h_FE
• Satisfactory linearity of forward current transfer ratio h_FE
• Dielectric breakdown voltage of the package: > 5 kV
• High-speed switching
I Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
V_CBO
−60
V
Collector to emitter voltage
V_CEO
−60
V
Emitter to base voltage
V_EBO
−5
V
Peak collector current
I_CP
−16
A
Collector current
I_C
−8
A
Collector power TC = 25°C
P_C
20
W
dissipation
T_a = 25°C
2.0
Junction temperature
T_j
150
°C
Storage temperature
T_stg
−55 to +150
°C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D Package
I Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Turn-on time
Storage time
Fall time
I_CBO
I_CEO
V_CEO
h_FE1
h_FE2
V_CE(sat)
V_BE(sat)
t_on
t_stg
t_f
V_CB = −60 V, I_E = 0
V_CE = −60 V, I_E = 0
I_C = −10 mA, I_B = 0
V_CE = −2 V, I_C = − 0.1 A
V_CE = −2 V, I_C = −5 A
I_C = −5 A, I_B = − 0.25 A
I_C = −5 A, I_C = − 0.25 A
I_C = −4 A, I_B1 = −400 mA
I_B2 = 400 mA, V_CC = 50 V
Min Typ Max Unit
−100 µA
−100 µA
−60
V
100
230
30
−1.2
V
−1.7
V
0.2 0.5
µs
0.1 0.15 µs
0.5 1.0
µs
1