2SA1982 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SA1982
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SC5346
s ^Features
q Satisfactory foward current transfer ratio h_FE collector current I_C
characteristics.
q High collector to emitter voltage V_CEO.
q Small collector output capacitance C_ob.
q Makes up a complementary pair with 2SC2631, which is opti-
mum for the pre-driver stage of a 20 to 40W output amplifier.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–150
V
Collector to emitter voltage V_CEO
–150
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–100
mA
Collector current
I_C
–50
mA
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55~+150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
1
2
3
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45^{+–00..105}
(HW type)
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
I_CBO
V_CB = –100V, I_E = 0
–1
µA
Collector to emitter voltage
V_CEO
I_C = –0.1mA, I_B = 0
–150
V
Emitter to base voltage
Forward current transfer ratio
V_EBO
h_FE*1
I_E = –10µA, I_C = 0
V_CE = –5V, I_C = –10mA
–5
V
130
330
Collector to emitter saturation voltage V_CE(sat)
I_C = –30mA, I_B = –3mA
–1
V
Noise voltage
NV
V_CE = –10V, I_C = –1mA, G_V = 80dB
R_g = 100kΩ, Function = FLAT
150
300
mV
Transition frequency
f_T
V_CB = –10V, I_E = 10mA, f = 200MHz
200
MHz
Collector output capacitance
C_ob
V_CB = –10V, I_E = 0, f = 1MHz
5
pF
*1_{hFE Rank classification}
Rank
R
S
h_FE
130 ~ 220 185 ~ 330
1