2SA1961 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SA1961
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC5419
s ^Features
q High collector to emitter voltage V_CEO.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–200
V
Collector to emitter voltage V_CEO
–200
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
– 0.1
A
Collector current
I_C
–70
mA
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
1
2
3
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45^{+–00..105}
(HW type)
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
V_CEO
V_EBO
h_FE*1
I_C = –100µA, I_B = 0
I_E = –1µA, I_C = 0
V_CE = –10V, I_C = –5mA
–200
–5
30
V
V
150
–
Collector to emitter saturation voltage V_CE(sat)
I_C = –50mA, I_B = –5mA
–2.5
V
Transition frequency
f_T
V_CB = –5V, I_E = 10mA, f = 200MHz
30
MHz
Collector output capacitance
C_ob
V_CB = –10V, I_E = 0, f = 1MHz
7
pF
*1_{hFE Rank classification}
Rank
P
h_FE
30 ~ 100
Q
60 ~ 150
1