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2SA1858 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type | |||
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Transistor
2SA1858
Silicon PNP epitaxial planer type
For general amplification
s Features
q High collector to emitter voltage VCEO.
5.0±0.2
Unit: mm
4.0±0.2
s Absolute Maximum Ratings (Ta=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â300
V
Collector to emitter voltage VCEO
â300
V
Emitter to base voltage
VEBO
â5
V
Peak collector current
ICP
â100
mA
Collector current
IC
â70
mA
Collector power dissipation PC
1
W
Junction temperature
Tj
150
ËC
Storage temperature
Tstg
â55 ~ +150
ËC
0.7±0.1
1.27
0.45
+0.15
â0.1
0.45
+0.15
â0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
TOâ92NL Package
s Electrical Characteristics (Ta=25ËC)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*
IC = â100µA, IB = 0
IE = â1µA, IC = 0
VCE = â10V, IC = â5mA
â300
â5
30
V
V
150
Collector to emitter saturation voltage VCE(sat)
IC = â10mA, IB = â1mA
â 0.6
V
Transition frequency
fT
VCB = â10V, IE = 10mA, f = 200MHz
50
MHz
Collector output capacitance
Cob
VCB = â10V, IE = 0, f = 1MHz
7
pF
*hFE Rank classification
Rank
P
hFE
30 ~ 100
Q
60 ~ 150
1
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