2SA1816 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SA1816(Tentative)
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
s ^Features
q High collector to emitter voltage V_CEO.
4.0±0.2
Unit: mm
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–150
V
Collector to emitter voltage V_CEO
–150
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–100
mA
Collector current
I_C
–50
mA
Collector power dissipation P_C
300
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
I_CBO
V_CEO
V_EBO
h_FE*1
V_CB = –100V, I_E = 0
I_C = –100µA, I_B = 0
I_E = –10µA, I_C = 0
V_CE = –5V, I_C = –10mA
–150
–5
90
–1
µA
V
V
450
Collector to emitter saturation voltage V_CE(sat)
I_C = –30mA, I_B = –3mA
–1
V
Transition frequency
f_T
V_CB = –10V, I_E = 10mA, f = 200MHz
200
MHz
Collector output capacitance
C_ob
V_CB = –10V, I_E = 0, f = 1MHz
5
pF
Noise voltage
V_CE = –10V, I_C = – 1mA, G_V = 80dB
NV
150
mV
R_g = 100kΩ, Function = FLAT
*1_{hFE Rank classification}
Rank
Q
R
h_FE
90 ~ 155 130 ~ 220
S
185 ~ 330
T
260 ~ 450
1