2SA1806G Datasheet, PDF (1/4 Pages) –

Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1806G
Silicon PNP epitaxial planar type
For high speed switching
■ Features
/ _{• High speed switching}
• Low collector-emitter saturation voltage V_CE(sat)
e _{• SS-Mini type package, allowing downsizing of the equipment and}
e. _{automatic insertion through the tape packing}
nc ^{d le stag ■ Absolute Maximum Ratings Ta = 25°C}
yc Parameter
Symbol Rating
Unit
a ^{e lifec Collector-base voltage (Emitter open) VCBO}
−15
V
t _{Collector-emitter voltage (Base open) VCEO}
−15
V
n ^{u uc Emitter-base voltage (Collector open) VEBO}
−4
V
rod _{Collector current}
I_C
−50
mA
te ^{tin r P Peakcollectorcurrent}
I_CP
−100
mA
fou ^{. Collector power dissipation}
P_C
125
mW
ing type ^{tion Junction temperature}
T_j
125
°C
w e ^a Storage temperature
T_stg −55 to +125 °C
■ Package
• Code
SSMini3-F3
• Marking Symbol: AK
• Pin Name
1. Base
2. Emitter
3. Collector
ain ^{onludes faoilnlotenanncce tyupeed typpeed test infoo.rjpm/en/ ■ Electrical Characteristics Ta = 25°C ± 3°C}
c ^inc d ^m tena ^{ntin d ty t la ic.c Parameter}
Symbol
Conditions
Min
ed ne ^{in co ue ou on Collector-base cutoff current (Emitter open) ICBO VCB = −8 V, IE = 0}
M is ^{tinu pla ma dis tin ab as Emitter-base cutoff current (Collector open) IEBO VCE = −3 V, IC = 0}
iscon ^{laned iscon URL .pan Forward current transfer ratio}
h_FE1 ^* V_CE = −1 V, I_C = −10 mA
50
n _{hFE2 VCE = −1 V, IC = −1 mA}
30
/D ^{p d ing ico Collector-emitter saturation voltage}
V_CE(sat) I_C = −10 mA, I_B = −1 mA
D _{nce llow} em _{Transition frequency}
f_T
V_CB = −10 V, I_E = 10 mA, f = 200 MHz 800
a ^{fo .s Collector output capacitance}
ten isit ^{ww (Common base, input open circuited)}
C_ob V_CB = −5 V, I_E = 0, f = 1 MHz
ain e ^{v ://w Turn-on time}
t_on Refer to the switching time
M _as ttp ^{Turn-off time}
Ple ^{h Storage time}
t_off measurement circuit
t_s
Typ Max
− 0.1
− 0.1
150
− 0.1
1 500
1
− 0.2
12
20
19
Unit
µA
µA

V
MHz
pF
ns
ns
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
Q
R
h_FE1
50 to 120
90 to 150
Ranking is not given for any product.
Publication date: May 2007
SJC00381AED
1