2SA1806 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SA1806
Silicon PNP epitaxial planer type
For high speed switching
Unit: mm
s ^Features
q High-speed switching.
q Low collector to emitter saturation voltage V_CE(sat).
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–15
V
Collector to emitter voltage V_CEO
–15
V
Emitter to base voltage
V_EBO
–4
V
Peak collector current
I_CP
–100
mA
Collector current
I_C
–50
mA
Collector power dissipation P_C
125
mW
Junction temperature
T_j
125
˚C
Storage temperature
T_stg
–55 ~ +125
˚C
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : AK
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
I_CBO
I_EBO
h_FE1*
h_FE2
V_CB = –8V, I_E = 0
V_EB = –3V, I_C = 0
V_CE = –1V, I_C = –10mA
V_CE = –1V, I_C = –1mA
– 0.1 µA
– 0.1 µA
50
150
30
Collector to emitter saturation voltage V_CE(sat)
I_C = –10mA, I_B = – 1mA
– 0.1 – 0.2
V
Transition frequency
f_T
V_CB = –10V, I_E = 10mA, f = 200MHz
800
1500
MHz
Collector output capacitance
C_ob
V_CB = –5V, I_E = 0, f = 1MHz
1
pF
Turn-on time
t_on
(Note 1) Next page
12
ns
Turn-off time
t_off
(Note 1) Next page
20
ns
Storage time
t_stg
(Note 1) Next page
19
ns
*_{hFE1 Rank classification}
Rank
h_FE1
Marking Symbol
Q
50 ~ 120
AKQ
R
90 ~ 150
AKR
1