2SA1791 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SA1791
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC4656
s ^Features
q High transition frequency f_T.
q Small collector output capacitance C_ob.
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–50
V
Collector to emitter voltage V_CEO
–50
V
Emitter to base voltage
V_EBO
–5
V
Collector current
I_C
–50
mA
Collector power dissipation P_C
125
mW
Junction temperature
T_j
125
˚C
Storage temperature
T_stg
–55 ~ +125
˚C
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : AL
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
I_CBO
I_CEO
V_CBO
V_CB = –10V, I_E = 0
V_CE = –10V, I_B = 0
I_C = –10µA, I_E = 0
– 0.1 µA
–100 µA
–50
V
Collector to emitter voltage
V_CEO
I_C = –1mA, I_B = 0
–50
V
Emitter to base voltage
V_EBO
I_E = –10µA, I_C = 0
–5
V
Forward current transfer ratio
h_FE
V_CE = –10V, I_C = –2mA
200
500
Collector to emitter saturation voltage V_CE(sat)
I_C = –10mA, I_B = –1mA
– 0.1 – 0.3
V
Transition frequency
f_T
V_CB = –10V, I_E = 2mA, f = 200MHz
250
MHz
Collector output capacitance
C_ob
V_CB = –10V, I_E = 0, f = 1MHz
1.5
pF
*_{hFE Rank classification}
Rank
h_FE
Marking Symbol
Q
200 ~ 400
ALQ
R
250 ~ 500
ALR
1