2SA1790J Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For high-frequency amplification

Transistors
2SA1790J
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4626J
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f_T
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−30
V
Collector-emitter voltage (Base open) V_CEO
−20
V
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−30
mA
Collector power dissipation
P_C
125
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg −55 to +125 °C
Unit: mm
1.60^{+–00..0035}
1.00±0.05
3
12
0.27±0.02
(0.50)(0.50)
5˚
0.12^{+–00..0013}
EIAJ: SC-89
SSMini3-F1 Package
Marking Symbol: E
1: Base
2: Emitter
3: Collector
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Base-emitter voltage
V_BE V_CE = −10 V, I_C = −1 mA
Collector-base cutoff current (Emitter open) I_CBO V_CB = −10 V, I_E = 0
Collector-emitter cutoff current (Base open) I_CEO V_CE = −20 V, I_B = 0
Emitter-base cutoff current (Collector open) I_EBO V_EB = −5 V, I_C = 0
Forward current transfer ratio ^*
h_FE V_CE = −10 V, I_C = −1 mA
70
Collector-emitter saturation voltage
V_CE(sat) I_C = −10 mA, I_B = −1 mA
Transition frequency
f_T
V_CB = −10 V, I_E = 1 mA, f = 200 MHz
150
Noise figure
NF V_CB = −10 V, I_E = 1 mA, f = 5 MHz
Reverse transfer impedance
Z_rb V_CB = −10 V, I_E = 1 mA, f = 2 MHz
Reverse transfer capacitance (Common emitter) C_re V_CB = −10 V, I_E = 1 mA, f = 10.7 MHz
− 0.7
− 0.1
300
2.8
22
1.2
− 0.1
−100
−10
220
4.0
50
2.0
V
µA
µA
µA

V
MHz
dB
Ω
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
B
C
h_FE
70 to 140 110 to 220
Publication date: July 2003
SJC00291AED
1