2SA1790 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SA1790
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC4626
s ^Features
q High transition frequency f_T.
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–30
V
Collector to emitter voltage V_CEO
–20
V
Emitter to base voltage
V_EBO
–5
V
Collector current
I_C
–30
mA
Collector power dissipation P_C
125
mW
Junction temperature
T_j
125
˚C
Storage temperature
T_stg
–55 ~ +125
˚C
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : E
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector to emitter saturation voltage
Base to emitter voltage
Noise figure
I_CBO
I_CEO
I_EBO
h_FE*
f_T
V_CE(sat)
V_BE
NF
Reverse transfer impedance
Z_rb
Common emitter reverse transfer
C_re
capacitance
V_CB = –10V, I_E = 0
V_CE = –20V, I_B = 0
– 0.1
µA
–100
V_EB = –5V, I_C = 0
–10
µA
V_CE = –10V, I_C = 1mA
70
220
V_CB = –10V, I_E = 1mA, f = 200MHz 150
300
MHz
I_C = –10mA, I_B = –1mA
– 0.1
V
V_CE = –10V, I_C = –1mA
– 0.7
V
V_CB = –10V, I_E = 1mA, f = 5MHz
2.8
4.0
dB
V_CB = –10V, I_E = 1mA, f = 2MHz
22
60
Ω
V_CE = –10V, I_C = –1mA
f = 10.7MHz
1.2
2.0
pF
*_{hFE Rank classification}
Rank
h_FE
Marking Symbol
B
70 ~ 140
EB
C
110 ~ 220
EC
1