2SA1767 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SA1767
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC1473A
s ^Features
q High collector to emitter voltage V_CEO.
5.0±0.2
Unit: mm
4.0±0.2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–300
V
Collector to emitter voltage V_CEO
–300
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–100
mA
Collector current
I_C
–70
mA
Collector power dissipation P_C
750
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
V_CEO
V_EBO
h_FE*
I_C = –100µA, I_B = 0
I_E = –1µA, I_C = 0
V_CE = –10V, I_C = –5mA
–300
–5
60
V
V
150
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
V_CE(sat)
f_T
C_ob
I_C = –10mA, I_B = –1mA
V_CB = –10V, I_E = 10mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
– 0.6
V
50
MHz
7
pF
*_{hFE Rank classification}
Rank
Q
h_FE
60 ~ 150
1