2SA1762 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SA1762
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC4606
s ^Features
q High collector to emitter voltage V_CEO.
q Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–80
V
Collector to emitter voltage V_CEO
–80
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–1
A
Collector current
I_C
– 0.5
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
3
2
1
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
V_CBO
V_CEO
V_EBO
h_FE1*
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
Conditions
V_CB = –20V, I_E = 0
I_C = –10µA, I_E = 0
I_C = –100µA, I_B = 0
I_E = –10µA, I_C = 0
V_CE = –10V, I_C = –150mA
V_CE = –5V, I_C = –500mA
I_C = –300mA, I_B = –30mA
I_C = –300mA, I_B = –30mA
V_CB = –10V, I_E = 50mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1 MHz
min
typ
max Unit
– 0.1 µA
–80
V
–80
V
–5
V
130
330
50
100
– 0.2 – 0.4
V
– 0.85 –1.2
V
85
MHz
11
20
pF
*_{hFE1 Rank classification}
Rank
R
S
h_FE1
130 ~ 220 185 ~ 330
1