2SA1748 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SA1748
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC4562
s ^Features
q High transition frequency f_T.
q Small collector output capacitance C_ob.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–50
V
Collector to emitter voltage V_CEO
–50
V
Emitter to base voltage
V_EBO
–5
V
Collector current
I_C
–50
mA
Collector power dissipation P_C
150
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol : AL
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE
V_CE(sat)
V_CB = –10V, I_E = 0
V_CE = –10V, I_B = 0
I_C = –10µA, I_E = 0
I_C = –1mA, I_B = 0
I_E = –10µA, I_C = 0
V_CE = –10V, I_C = –2mA
I_C = –10mA, I_B = –1mA
– 0.1 µA
–100 µA
–50
V
–50
V
–5
V
200
500
– 0.1 – 0.3
V
Transition frequency
f_T
V_CB = –10V, I_E = 2mA, f = 200MHz
250
MHz
Collector output capacitance
C_ob
V_CB = –10V, I_E = 0, f = 1MHz
1.5
pF
*_{hFE Rank classification}
Rank
h_FE
Marking Symbol
Q
200 ~ 400
ALQ
R
250 ~ 500
ALR
1