|
2SA1738 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type | |||
|
Transistor
2SA1738
Silicon PNP epitaxial planer type
For high speed switching
s Features
q High-speed switch (pair with 2SC3757)
q Low collector to emitter saturation voltage VCE(sat).
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â15
V
Collector to emitter voltage VCEO
â15
V
Emitter to base voltage
VEBO
â4
V
Peak collector current
ICP
â100
mA
Collector current
IC
â50
mA
Collector power dissipation PC
200
mW
Junction temperature
Tj
150
ËC
Storage temperature
Tstg
â55 ~ +150
ËC
Unit: mm
0.65±0.15
+0.2
2.8 â0.3
+0.25
1.5 â0.05
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TOâ236
EIAJ:SCâ59
Mini Type Package
Marking symbol : AK
s Electrical Characteristics (Ta=25ËC)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
ICBO
IEBO
hFE1*
hFE2
VCB = â8V, IE = 0
VEB = â3V, IC = 0
VCE = â1V, IC = â10mA
VCE = â1V, IC = â1mA
â 0.1 µA
â 0.1 µA
50
150
30
Collector to emitter saturation voltage VCE(sat)
IC = â10mA, IB = â1mA
â 0.1 â 0.2
V
Transition frequency
fT
Collector output capacitance
Cob
VCB = â10V, IE = 10mA, f = 200MHz
800
1500
VCB = â5V, IE = 0, f = 1MHz
1
MHz
pF
Turn-on time
ton
(Note 1) Next page
12
ns
Turn-off time
Storage time
toff
(Note 1) Next page
tstg
(Note 1) Next page
20
ns
19
ns
*hFE1 Rank classification
Rank
Q
hFE1
50 ~ 120
R
90 ~ 150
1
|
▷ |