2SA1674 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SA1674
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SC4391
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q High collector to emitter voltage V_CEO.
q Allowing supply with the radial taping.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–80
V
Collector to emitter voltage V_CEO
–80
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–1.5
A
Collector current
I_C
–1
A
Collector power dissipation (T_C=25˚C)
P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
1
2
3
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45^{+–00..105}
(HW type)
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I_CBO
V_CBO
V_CEO
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
Conditions
V_CB = –40V, I_E = 0
I_C = –10µA, I_E = 0
I_C = –1mA, I_B = 0
I_E = –10µA, I_C = 0
V_CE = –2V, I_C = –100mA
V_CE = –2V, I_C = –500mA^*2
I_C = –500mA, I_B = –50mA^*2
I_C = –500mA, I_B = –50mA^*2
V_CB = –10V, I_E = 50mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
*1_{hFE1 Rank classification}
Rank
R
S
h_FE1
120 ~ 240 170 ~ 340
min
typ
max Unit
– 0.1 µA
–80
V
–80
V
–5
V
120
340
60
– 0.2 – 0.3
V
– 0.85 –1.2
V
120
MHz
15
30
pF
*2 _{Pulse measurement}
1