2SA1619 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SA1619, 2SA1619A
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC4208 and 2SC4208A
s ^Features
q Complementary pair with 2SC4208 and 2SC4208A.
q Allowing supply with the radial taping and automatic insertion
possible.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SA1619
–30
base voltage 2SA1619A
V_CBO
–60
V
Collector to 2SA1619
–25
emitter voltage 2SA1619A
V_CEO
–50
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–1
A
Collector current
I_C
– 0.5
A
Collector power dissipation P_C
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
1.27
+0.15
0.45 –0.1
+0.15
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
TO–92NL Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Collector cutoff current
Collector to base 2SA1619
voltage
2SA1619A
I_CBO
V_CBO
Collector to emitter 2SA1619
voltage
V_CEO
2SA1619A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
V_EBO
h_FE1*
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
Conditions
V_CB = –20V, I_E = 0
I_C = –10µA, I_E = 0
I_C = –10mA, I_B = 0
I_E = –10µA, I_C = 0
V_CE = –10V, I_C = –150mA
V_CE = –10V, I_C = –500mA
I_C = –300mA, I_B = –30mA
I_C = –300mA, I_B = –30mA
V_CB = –10V, I_E = 50mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
min
typ
max Unit
– 0.1 µA
–30
V
–60
–25
V
–50
–5
V
85
160 340
40
– 0.35 – 0.6
V
–1.1 –1.5
V
200
MHz
6
15
pF
*_{hFE1 Rank classification}
Rank
Q
R
h_FE1
85 ~ 170 120 ~ 240
S
170 ~ 340
1