2SA1535 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Power Transistors
2SA1535, 2SA1535A
Silicon PNP epitaxial planar type
For low-frequency driver and high power amplification
Complementary to 2SC3944 and 2SC3944A
s ^Features
q Satisfactory foward current transfer ratio h_FE vs. collector cur-
rent I_C characteristics
q High transition frequency f_T
q Makes up a complementary pair with 2SC3944 and 2SC3944A,
which is optimum for the driver-stage of a 60 to 100W output
amplifier.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SA1535
–150
base voltage 2SA1535A
V_CBO
–180
V
Collector to 2SA1535
–150
emitter voltage 2SA1535A
V_CEO
–180
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–1.5
A
Collector current
I_C
–1
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
15
W
2.0
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current 2SA1535
Collector to emitter 2SA1535
voltage
2SA1535A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
V_CEO
V_EBO
h_FE1*
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
V_CB = –150V, I_E = 0
I_C = –1mA, I_B = 0
I_C = –100µA, I_B = 0
I_E = –10µA, I_C = 0
V_CE = –10V, I_C = –150mA
V_CE = –5V, I_C = –500mA
I_C = –500mA, I_B = –50mA
I_C = –500mA, I_B = –50mA
V_CE = –10V, I_C = –50mA, f = 10MHz
V_CB = –10V, I_E = 0, f = 1MHz
*_{hFE1 Rank classification}
Rank
Q
R
h_FE1
90 to 155 130 to 220
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min
typ
max Unit
–10
µA
–150
V
–180
–5
V
90
160 220
50
100
– 0.5 –2.0
V
–1.0 –2.0
V
200
MHz
30
50
pF
1