2SA1534 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SA1534, 2SA1534A
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC3940 and 2SC3940A
s ^Features
q Complementary pair with 2SC3940 and 2SC3940A.
q Allowing supply with the radial taping and automatic insertion
possible.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SA1534
–30
base voltage 2SA1534A
V_CBO
–60
V
Collector to 2SA1534
–25
emitter voltage 2SA1534A
V_CEO
–50
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–1.5
A
Collector current
I_C
–1
A
Collector power dissipation P_C
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
1.27
0.45
+0.15
–0.1
0.45
+0.15
–0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
TO–92NL Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Collector cutoff current
Collector to base 2SA1534
voltage
2SA1534A
I_CBO
V_CBO
Collector to emitter 2SA1534
voltage
V_CEO
2SA1534A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
V_EBO
h_FE1*
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
Conditions
V_CB = –20V, I_E = 0
I_C = –10µA, I_E = 0
I_C = –2mA, I_B = 0
I_E = –10µA, I_C = 0
V_CE = –10V, I_C = –500mA
V_CE = –5V, I_C = –1A
I_C = –500mA, I_B = –50mA
I_C = –500mA, I_B = –50mA
V_CB = –10V, I_E = 50mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
min
typ
max Unit
– 0.1 µA
–30
V
–60
–25
V
–50
–5
V
85
340
50
– 0.2 – 0.4
V
– 0.85 –1.2
V
200
MHz
20
30
pF
*_{hFE1 Rank classification}
Rank
Q
R
h_FE1
85 ~ 170 120 ~ 240
S
170 ~ 340
1