2SA1499 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Power Transistors
2SA1499
Silicon PNP epitaxial planar type
For high-speed switching
s ^Features
q High foward current transfer ratio h_FE
q High-speed switching
q High collector to base voltage V_CBO
q Full-pack package which can be installed to the heat sink with
one screw.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–400
V
Collector to emitter voltage V_CEO
–400
V
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–1.2
A
Collector current
I_C
– 0.6
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
25
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
I_CBO
V_CB = –400V, I_E = 0
I_EBO
V_EB = –7V, I_C = 0
–100 µA
–100 µA
Collector to emitter voltage
Forward current transfer ratio
V_CEO
h_FE1*
h_FE2
I_C = –10mA, I_B = 0
V_CE = –5V, I_C = –100mA
V_CE = –5V, I_C = –300mA
–400
30
10
V
160
Collector to emitter saturation voltage V_CE(sat)
Base to emitter saturation voltage V_BE(sat)
I_C = –300mA, I_B = –60mA
I_C = –300mA, I_B = –60mA
–1.0
V
–1.2
V
Transition frequency
Turn-on time
Storage time
Fall time
f_T
V_CE = –10V, I_C = –100mA, f = 1MHz
t_on
I_C = –300mA,
t_stg
I_B1 = –60mA, I_B2 = 60mA,
t_f
V_CC = –100V
15
MHz
1.0
µs
3.5
µs
1.0
µs
*_{hFE1 Rank classification}
Rank
Q
P
h_FE1
30 to 60 50 to 100
O
80 to 160
1