2SA1487 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – SILICON PNP EPITAXIAL PLANER TYPE

Transistor
2SA1487
Silicon PNP epitaxial planer type
For video amplifier
s ^Features
q High transition frequency f_T.
q Small collector output capacitance C_ob.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–85
V
Collector to emitter voltage V_CEO
–85
V
Emitter to base voltage
V_EBO
–4
V
Peak collector current
I_CP
–100
mA
Collector current
I_C
–50
mA
Collector power dissipation P_C
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
+0.2
0.45–0.1
1.27
1.27
123
+0.2
0.45–0.1
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
I_CEO
V_CBO
V_CE = –60V, I_B = 0
I_C = –100µA, I_E = 0
–10
µA
–85
V
Collector to emitter voltage
V_CEO
I_C = 1mA, I_B = 0
–85
V
Emitter to base voltage
V_EBO
I_E = –100µA, I_C = 0
–4
V
Forward current transfer ratio
h_FE
V_CE = –5V, I_C = –10mA
60
Collector to emitter saturation voltage V_CE(sat)
I_C = –10mA, I_B = –1mA
– 0.5
V
Transition frequency
f_T
V_CB = –5V, I_E = 10mA, f = 200MHz
500
MHz
Collector output capacitance
C_ob
V_CB = –10V, I_E = 0, f = 1MHz
2.7
pF
1