|
2SA1323 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type | |||
|
Transistor
2SA1323
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC3314
s Features
q Allowing supply with the radial taping.
q High transition frequency fT.
q Optimum for high-density mounting.
4.0±0.2
Unit: mm
s Absolute Maximum Ratings (Ta=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â30
V
Collector to emitter voltage VCEO
â20
V
Emitter to base voltage
VEBO
â5
V
Peak collector current
ICP
â60
mA
Collector current
IC
â30
mA
Collector power dissipation PC
300
mW
Junction temperature
Tj
150
ËC
Storage temperature
Tstg
â55 ~ +150
ËC
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SCâ72
New S Type Package
s Electrical Characteristics (Ta=25ËC)
Parameter
Symbol
Conditions
min
typ
max Unit
ICBO
Collector cutoff current
ICEO
Emitter cutoff current
IEBO
Forward current transfer ratio
hFE*
VCB = â10V, IE = 0
VCE = â20V, IB = 0
VEB = â5V, IC = 0
VCE = â10V, IC = â1mA
â 0.1 µA
â100 µA
â10
µA
70
220
Collector to emitter saturation voltage VCE(sat)
IC = â10mA, IB = â1mA
â 0.1
V
Base to emitter voltage
VBE
VCE = â10V, IC = â1mA
â 0.7
V
Transition frequency
fT
VCB = â10V, IE = 1mA, f = 200MHz 150
300
MHz
Noise figure
NF
Reverse transfer impedance
Zrb
VCB = â10V, IE = 1mA, f = 5MHz
VCB = â10V, IE = 1mA, f = 2MHz
2.8
4.0
dB
22
50
â¦
Common emitter reverse transfer capacitanse Cre
VCE = â10V, IC = â1mA, f = 10.7MHz
1.2
2.0
pF
*hFE Rank classification
Rank
B
hFE
70 ~ 140
C
110 ~ 220
1
|
▷ |