|
2SA1310 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type | |||
|
Transistor
2SA1310
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC3312
s Features
q Allowing supply with the radial taping.
q Low noise voltage NV.
q High foward current transfer ratio hFE.
q Optimum for high-density mounting.
s Absolute Maximum Ratings (Ta=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â60
V
Collector to emitter voltage VCEO
â55
V
Emitter to base voltage
VEBO
â7
V
Peak collector current
ICP
â200
mA
Collector current
IC
â100
mA
Collector power dissipation PC
300
mW
Junction temperature
Tj
150
ËC
Storage temperature
Tstg
â55 ~ +150
ËC
4.0±0.2
Unit: mm
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SCâ72
New S Type Package
s Electrical Characteristics (Ta=25ËC)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
ICBO
ICEO
VCBO
VCB = â10V, IE = 0
VCE = â10V, IB = 0
IC = â10µA, IE = 0
â 0.1 µA
â1
µA
â60
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*
IC = â2mA, IB = 0
IE = â10µA, IC = 0
VCE = â5V, IC = â2mA
â55
V
â7
V
180
700
Collector to emitter saturation voltage VCE(sat)
IC = â100mA, IB = â10mA
â 0.6
V
Base to emitter voltage
VBE
VCE = â1V, IC = â30mA
â1
V
Transition frequency
fT
VCB = â5V, IE = 2mA, f = 200MHz
200
MHz
Noise voltage
VCE = â10V, IC = â1mA, GV = 80dB
NV
Rg = 100kâ¦, Function = FLAT
150
mV
*hFE Rank classification
Rank
R
hFE
180 ~ 360
S
260 ~ 520
T
360 ~ 700
1
|
▷ |