2SA1309A Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SA1309A
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SC3311A
s ^Features
q High foward current transfer ratio h_FE.
q Allowing supply with the radial taping.
q Optimum for high-density mounting.
4.0±0.2
Unit: mm
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–60
V
Collector to emitter voltage V_CEO
–50
V
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–200
mA
Collector current
I_C
–100
mA
Collector power dissipation P_C
300
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE*
V_CE(sat)
f_T
C_ob
V_CB = –10V, I_E = 0
V_CE = –10V, I_B = 0
I_C = –10µA, I_E = 0
–60
I_C = –2mA, I_B = 0
–50
I_E = –10µA, I_C = 0
–7
V_CE = –10V, I_C = –2mA
160
I_C = –50mA, I_B = –5mA
V_CB = –10V, I_E = 1mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
–100 nA
–1
µA
V
V
V
460
– 0.3
V
80
MHz
3.5
pF
*_{hFE Rank classification}
Rank
Q
h_FE
160 ~ 260
R
210 ~ 340
S
290 ~ 460
1