2SA1127 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SA1127
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC2634
s ^Features
q Low noise characteristics.
q High foward current transfer ratio h_FE.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–60
V
Collector to emitter voltage V_CEO
–55
V
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–200
mA
Collector current
I_C
–100
mA
Collector power dissipation P_C
400
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE*
V_CE(sat)
V_BE
f_T
Noise voltage
NV
V_CB = –10V, I_E = 0
–1 –100 nA
V_CE = –10V, I_B = 0
– 0.01 –1
µA
I_C = –10µA, I_E = 0
–60
V
I_C = –1mA, I_B = 0
–55
V
I_E = –10µA, I_C = 0
–7
V
V_CE = –5V, I_C = –2mA
180
700
I_C = –100mA, I_B = –10mA
– 0.6
V
V_CE = –1V, I_C = –30mA
–1
V
V_CB = –5V, I_E = 2mA, f = 200MHz
200
MHz
V_CE = –10V, I_C = –1mA, G_V = 80dB
R_g = 100kΩ, Function = FLAT
150
mV
*_{hFE Rank classification}
Rank
R
h_FE
180 ~ 360
S
260 ~ 520
T
360 ~ 700
1