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2SA1124 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type | |||
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Transistor
2SA1124
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SC2632
s Features
q Satisfactory foward current transfer ratio hFE collector current IC
characteristics.
q High collector to emitter voltage VCEO.
q Small collector output capacitance Cob.
q Makes up a complementary pair with 2SC2632, which is opti-
mum for the pre-driver stage of a 40 to 60W output amplifier.
s Absolute Maximum Ratings (Ta=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â150
V
Collector to emitter voltage VCEO
â150
V
Emitter to base voltage
VEBO
â5
V
Peak collector current
ICP
â100
mA
Collector current
IC
â50
mA
Collector power dissipation PC
1
W
Junction temperature
Tj
150
ËC
Storage temperature
Tstg
â55 ~ +150
ËC
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
0.45+â00..21
1.27
1.27
123
0.45+â00..21
1:Emitter
2:Collector
3:Base
EIAJ:SCâ51
TOâ92L Package
s Electrical Characteristics (Ta=25ËC)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
ICBO
VCEO
VEBO
hFE*
VCE(sat)
VCB = â100V, IE = 0
IC = â0.1mA, IB = 0
IE = â10µA, IC = 0
VCE = â5V, IC = â10mA
IC = â30mA, IB = â3mA
â150
â5
130
â1
µA
V
V
450
â1
V
Transition frequency
fT
VCB = â10V, IE = 10mA, f = 200MHz
200
MHz
Collector output capacitance
Cob
Noise voltage
NV
VCE = â10V, IE = 0, f = 1MHz
VCE = â10V, IC = â1mA, GV = 80dB
Rg = 100kâ¦, Function = FLAT
5
pF
150
300
mV
*hFE Rank classification
Rank
R
hFE
130 ~ 220
S
185 ~ 330
T
260 ~ 450
1
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