2SA1034 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SA1034, 2SA1035
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC2405 and 2SC2406
s ^Features
q Low noise voltage NV.
q High foward current transfer ratio h_FE.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
Parameter
Symbol
Ratings
Unit
Collector to 2SA1034
–35
base voltage 2SA1035
V_CBO
–55
V
Collector to 2SA1034
–35
emitter voltage 2SA1035
V_CEO
–55
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–100
mA
Collector current
I_C
–50
mA
Collector power dissipation P_C
200
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
s ^{Electrical Characteristics (Ta=25˚C)}
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : F^(2SA1034)
H^(2SA1035)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base
voltage
2SA1034
2SA1035
I_CBO
I_CEO
V_CBO
V_CB = –10V, I_E = 0
V_CE = –10V, I_B = 0
I_C = –10µA, I_E = 0
–100 nA
–1
µA
–35
V
–55
Collector to emitter 2SA1034
–35
V_CEO
I_C = –2mA, I_B = 0
V
voltage
2SA1035
–55
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
V_EBO
h_FE*1
V_CE(sat)
V_BE
f_T
Noise voltage
NV
*_{hFE1 Rank classification}
I_E = –10µA, I_C = 0
–5
V
V_CE = –5V, I_C = –2mA
180
700
I_C = –100mA, I_B = –10mA^*2
– 0.7 – 0.6
V
V_CE = –1V, I_C = –100mA^*2
200 –1.0
V
V_CB = –5V, I_E = 2mA, f = 200MHz
MHz
V_CE = –10V, I_C = –1mA, G_V = 80dB
R_g = 100kΩ, Function = FLAT
150
mV
*2 _{Pulse measurement}
Rank
R
S
T
h_FE
Marking ^2SA1034
Symbol
2SA1035
180 ~ 360
FR
HR
260 ~ 520
FS
HS
360 ~ 700
FT
HT
1