2SA1022 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SA1022
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC2295
s ^Features
q High transition frequency f_T.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–30
V
Collector to emitter voltage V_CEO
–20
V
Emitter to base voltage
V_EBO
–5
V
Collector current
I_C
–30
mA
Collector power dissipation P_C
200
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : E
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
I_CBO
I_CEO
Emitter cutoff current
I_EBO
Forward current transfer ratio
h_FE*
V_CB = –10V, I_E = 0
V_CE = –20V, I_B = 0
V_EB = –5V, I_C = 0
V_CE = –10V, I_C = –1mA
– 0.1 µA
–100 µA
–10
µA
70
220
Collector to emitter saturation voltage V_CE(sat)
I_C = –10mA, I_B = –1mA
– 0.1
V
Base to emitter voltage
V_BE
V_CE = –10V, I_C = –1mA
– 0.7
V
Transition frequency
f_T
V_CB = –10V, I_E = 1mA, f = 200MHz 150
300
MHz
Noise figure
NF
Reverse transfer impedance
Z_rb
V_CB = –10V, I_E = 1mA, f = 5MHz
V_CB = –10V, I_E = 1mA, f = 2MHz
2.8
dB
22
Ω
Common emitter reverse transfer
C_re
capacitance
V_CE = –10V, I_C = –1mA
f = 10.7MHz
1.2
pF
*_{hFE Rank classification}
Rank
B
h_FE
Marking Symbol
70 ~ 140
EB
C
110 ~ 220
EC
1