2SA0921 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For high breakdown voltage low-noise amplification Complementary

Transistors
2SA0921 (2SA921)
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SC1980
■ Features
• High collector-emitter voltage (Base open) V_CEO
• Low noise voltage NV
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−120
V
Collector-emitter voltage (Base open) V_CEO
−120
V
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−20
mA
Peak collector current
I_CP
−50
mA
Collector power dissipation
P_C
250
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45^{+–00..115}
2.5^{+–00..26}
2.5^{+–00..26}
0.45^{+–00..115}
1 23
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = −10 µA, I_E = 0
−120
V
Collector-emitter voltage (Base open) V_CEO I_C = −1 mA, I_B = 0
−120
V
Emitter-base voltage (Collector open) V_EBO I_E = −10 µA, I_C = 0
−5
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = −50 V, I_E = 0
−100 nA
Collector-emitter cutoff current (Base open) I_CEO V_CE = −50 V, I_B = 0
−1
µA
Forward current transfer ratio ^*
h_FE V_CE = −5 V, I_C = −2 mA
180
700

Collector-emitter saturation voltage
V_CE(sat) I_C = −20 mA, I_B = −2 mA
− 0.6 V
Transition frequency
f_T
V_CB = −5 V, I_E = 2 mA, f = 200 MHz
200
MHz
Noise voltage
NV V_CE = −40 V, I_C = −1 mA, G_V = 80 dB
R_g = 100 kΩ, Function = FLAT
150 mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
R
S
T
h_FE
180 to 360 260 to 520 360 to 700
Publication date: January 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00007BED
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