2SA0914 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For audio system/pli drive

Power Transistors
2SA0914 (2SA914)
Silicon PNP epitaxial planar type
For audio system/pli drive
Complementary to 2SC1953
■ Features
• A complementary pair with 2SC1953, is optimum for the pre-
driver stage of a 60 W to 100 W output amplifier
• TO-126B package which requires no insulation plate for instal-
lation to the heat sink
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−150
V
Collector-emitter voltage (Base open) V_CEO
−150
V
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−50
mA
Peak collector current
I_CP
−100
mA
Collector power dissipation
P_C
1.2
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
φ 3.16±0.1
8.0^{+–00..15}
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1 1.76±0.1
1: Emitter
123
2: Collector
3: Base
TO-126B-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio ^*
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V_CEO
V_EBO
I_CBO
h_FE
V_CE(sat)
f_T
C_ob
I_C = −100 µA, I_B = 0
I_E = −10 µA, I_C = 0
V_CB = −100 V, I_E = 0
V_CE = −5 V, I_C = −10 mA
I_C = −30 mA, I_B = −3 mA
V_CB = −10 V, I_E = 10 mA, f = 200 MHz
V_CB = −6 V, I_E = 0, f = 1 MHz
−150
−5
130
70
V
V
−1
µA
330

−1
V
MHz
5
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
h_FE
130 to 220 185 to 330
Publication date: December 2003
Note) The part number in the parenthesis shows conventional part number.
SJD00005CED
1