2SA0879 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – For general amplification Complementary to 2SC1573

Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC1573
■ Features
• High collector-emitter voltage (Base open) V_CEO
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−250
V
Collector-emitter voltage (Base open) V_CEO
−200
V
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
−70
mA
Peak collector current
I_CP
−100
mA
Collector power dissipation
P_C
1
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
0.45^{+–00..12}
0.45^{+–00..12}
(1.27)
(1.27)
1 : Emitter
123
2 : Collector
3 : Base
2.54±0.15
EIAJ : SC-51
TO-92L-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) V_CEO I_C = −100 µA, I_B = 0
−200
V
Emitter-base voltage (Collector open) V_EBO I_E = −1 µA, I_C = 0
−5
V
Forward current transfer ratio ^*
h_FE V_CE = −10 V, I_C = −5 mA
60
220

Collector-emitter saturation voltage
V_CE(sat) I_C = −50 mA, I_B = −5 mA
−1.5
V
Transition frequency
f_T
V_CB = −10 V, I_E = 10 mA, f = 200 MHz 50
80
MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = −10 V, I_E = 0, f = 1 MHz
5
10
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
Q
R
h_FE
60 to 150 100 to 220
Publication date: November 2002
Note) The part number in the parenthesis shows conventional part number.
SJC00006BED
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