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| 2PG402 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Insulated Gate Bipolar Transistor | |||
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IGBTs
2PG402
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage: VCES = 400V
q Allowing to control large current: IC(peak) = 130A
q Housed in the surface mounting package
s Applications
q For flash-light for use in a camera
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Unit
Collector to emitter voltage
VCES
400
V
Gate to emitter voltage
VGES
±8
V
DC
IC
Collector current
Pulse
ICP
5
A
130
A
Allowable power
dissipation
TC = 25°C PC
Ta = 25°C
10
W
1
Channel temperature
Storage temperature
Tch
150
°C
Tstg
â55 to +150
°C
6.5±0.1
5.3±0.1
4.35±0.1
3.0±0.1
unit: mm
0.85±0.1
4.6±0.1
0.75±0.1 0.5±0.1
0.05 to 0.15
1.0±0.1
1
2
3
Marking
1: Emitter
2: Collector
3: Gate
U Type Package
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Collector to emitter cut-off current
Gate to emitter leakage current
Collector to emitter breakdown voltage
Gate threshold voltage
Collector to emitter
saturation voltage
Input capacitance (Common Emitter)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
ICES
IGES
VCES
VGE(th)
VCE(sat)
Cies
td(on)
tr
td(off)
tf
VCE = 320V, VGE = 0
VGE = ±8V, VCE = 0
IC = 1mA, VGE = 0
VCE = 10V, IC = 1mA
VGE = 5V, IC = 5A
VGE = 5V, IC = 130A
VCE = 10V, VGE = 0, f = 1MHz
VCC = 300V, IC = 130A
VGE = 5V, Rg = 25â¦
min
typ
max
Unit
10
µA
±1
µA
400
V
0.5
1.5
V
2
V
10
1930
pF
130
ns
1.4
µs
350
ns
1.5
µs
1
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