22SC5405 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
2SC5405
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
Unit: mm
s ^Features
q High-speed switching
q High forward current transfer ratio h_FE which has satisfactory
linearity
q Dielectric breakdown voltage of the package: > 5kV
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
80
V
Collector to emitter voltage V_CEO
50
V
Emitter to base voltage
V_EBO
6
V
Peak collector current
I_CP
6
A
Collector current
I_C
3
A
Base current
I_B
1
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
20
W
2.0
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_CEO
I_EBO
V_CEO
h_FE*
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CB = 80V, I_E = 0
V_CE = 40V, I_B = 0
V_EB = 6V, I_C = 0
I_C = 25mA, I_B = 0
V_CE = 4V, I_C = 0.5A
I_C = 2A, I_B = 0.05A
V_CE = 12V, I_C = 0.2A, f = 10MHz
I_C = 1A, I_B1 = 0.05A, I_B2 = – 0.1A,
V_CC = 50V
9.9±0.3
4.6±0.2
2.9±0.2
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.54±0.3
1 2 3 _5.08±0.5
2.6±0.1
0.55±0.15
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
min
typ
max Unit
100
µA
100
µA
100
µA
50
V
500
1500
0.5
0.7
V
V
75
MHz
0.3
µs
3.5
µs
0.9
µs
*_{hFE Rank classification}
Rank
P
Q
h_FE
800 to 1500 500 to 1000
1