PAM2319 Datasheet, PDF (5/13 Pages) Power Analog Micoelectronics – Dual High-Efficiency PWM Step-Down DC-DC Coverter

PAM2319
Dual High-Efficiency PWM Step-Down DC-DC Coverter
Electrical Characteristic
T_A =25^O C, V_IN =3.3V, V_O =1.8V, C_IN =10µF, C_O =10µF, L=1.0µH, unless otherwise noted.
Channel 1
PAR AM ETER
Input Voltage Range
SYMB OL
V_IN
UVLO Threshold
VUVLO
Regulated Feedback Voltage
Reference Voltage Line Regulation
Regulated Output Voltage Acc uracy
Peak Inductor Current
Output Voltage Line Regulation
Output Voltage Load Regulation
Quiescent Current
Shutdown Current
Oscillator Frequenc y
V _FB
ΔV_{F B}
VO
IPK
LNR
LDR
IQ
I_SD
f_OSC
Drain-Sourc e On-State Resistance
SW Leakage Current
Efficiency
PSM Threshold
EN Threshold High
EN Threshold Low
EN Leak age Current
Soft-start
Over Temperature Protection
OTP Hys teresis
RDS(O N)
ILSW
η
I_TH
V_EH
V_EL
IEN
T ON
OTP
OTH
Test Conditions
MIN TYP MAX
2.7
5.5
V_IN Rising
Hysteresis
2.4 2.5
240
VIN Falling
1.8
0.588 0.6 0.612
0.3
IO = 100mA
VO=90%
V_IN = 2.7V to 5V, I_O=10mA
I_O=1mA to 1000mA
No load
-3
+3
1.5
0.2 0.5
-2
2
40 80
V_EN = 0V
V_O = 100%
VFB = 0V or VO = 0V
P MOSFET
0.1
1
3
1
0.35 0.45
N MOSFET
0.35 0.45
±0.01 1
Output1, Io=500mA,VIN=3.3V
84
Vin=3.3V
100
1.5
0.3
±0.01
From EN1 to Output
2
150
30
UNITS
V
V
mV
V
V
% /V
%
A
% /V
%
µA
µA
MH z
MH z
Ω
Ω
µA
%
mA
V
V
µA
mS
°C
°C
Power Analog Microelectronics, Inc
www.poweranalog.com
5
12/2011 Rev1.1