PAM2306D Datasheet, PDF (5/13 Pages) Power Analog Micoelectronics – Dual High-Efficiency PWM Step-Down DC-DC Coverter

PAM2306D
Dual High-Efficiency PWM Step-Down DC-DC Coverter
Electrical Characteristic
T_A =25^O C, V_IN =3.6V, V_O =1.8V, C_IN =10µF, C_O =10µF, L=2.2µH, unless otherwise noted.
PAR AM ETER
Input Voltage Range
Regulated Feedback Voltage
Reference Voltage Line Regulation
Regulated Output Voltage Accuary
Peak Inductor Current
Output Voltage Line Regulation
Output Voltage Load Regulation
Quiescent Current (per channel)
Shutdown Current (per channel)
Oscillator Frequenc y
Drain-Sourc e On-State Resistance
SW Leakage Current (per channel)
EN Threshold High
EN Threshold Low
EN Leak age Current
Over Temperature Protection
OTP Hys teresis
SYMB OL
V_IN
V _FB
ΔVF B
VO
I_PK
LNR
LDR
IQ
I_SD
f_OSC
RDS(O N)
ILSW
V_EH
VEL
IEN
OTP
OTH
Test Conditions
M IN
2.5
0.588
IO = 100mA
-3
V_IN=3V ,V_FB = 0.5V or V_O=90%
V_IN = 2.5V to 5V, I_O=10mA
IO=1mA to 1A
No load
V_EN = 0V
VO = 100%
1.2
VFB = 0V or VO = 0V
P MOSFET
IDS =1 0 0m A
N MOSFET
1.5
TYP
0.6
0.3
1.5
0.2
1.5
40
0.1
1.5
500
0.3
0.35
±0.01
±0.01
150
30
MAX
5.5
0.612
+3
0.5
70
1
1.8
0.45
0.5
1
0.3
UNITS
V
V
% /V
%
A
% /V
%
µA
µA
MH z
kHz
Ω
Ω
µA
V
V
µA
°C
°C
Power Analog Microelectronics, Inc
www.poweranalog.com
5
02/2012 Rev1.1