BAS70W Datasheet, PDF (2/3 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS70W/BAS70W-04/BAS70W-05/BAS70W-06
SURFACE MOUNT SCHOTTKY BARRIER DIODES
MAXIMUM RATING (TA=25^oC unless otherwise noted)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current ⁽¹⁾
Non-Repetitive Peak Forward
Surge Current @ tp<1.0s
Power Dissipation ⁽¹⁾
Thermal Resistance Junction
to Ambient Air
Operating Junction Temperure Range
Symbol
V_RRM
V_RRM
V_R
V_R(RMS)
I_F(AV)
I_FSM
Pd
R_θJA
Tj
Storage Temperature Range
T_STG
Value
70
49
70
100
200
625
-55 to + 150
-65 to + 150
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (IR=10µA)
Forward Voltage
IF=1.0mA
IF=15mA
Total Capacitance
VR=0V, f=1.0MHz
Symbol
V_(BR)R
V_F
C_T
Min
70
-
-
Reverse Leakage
VR=50V
IR
-
Reverse Recover Time
IF=IR =10mA, IR(Rec)=1.0mA
Trr
-
Max
-
0.41
1.00
2.0
0.1
5.0
Unit
V
V
mA
mA
mA
°C/W
°C
°C
Unit
V
V
PF
µA
nS
Device Marking
Item
BAS70W
BAS70W-05
Marking
K73
K75
BAS70W-06
K76
BAS70W-04
K74
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. Test period<300us.
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2
Eqivalent Circuit diagram
3
1
3
1
2
3
1
2
3
1
2