BAS70 Datasheet, PDF (2/2 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS70/BAS70-04
BAS70-05/BAS70-06
SURFACE MOUNT SCHOTTKY BARRIER DIODES
SMALL SIGNAL SCHOTTKY DIODES 200m AMPERES 70 VOLTS
Maximum Ratings (TJ=125 C Unless otherwise noted)
Characteristic
Reverse Voltage
Average Rectifier
Forward Current
Peak Repetitive
Forward Current
Rated VR, Square Wave,20KHz
Operating Junction
Temperature Range
Storage Temperature Range
Symbol
VR
IF(AV)
IFRM
TJ
Tstg
Value
70
200
200
-55 to +125
-55 to +150
Electrical Characteristics (TA=25 C Unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage (IR=100µA)
V(BR)R
70
Forward Voltage
IF=1.0mA
VF
IF=15mA
Total Capacitance
(VR=0V, f=1.0MHz)
CT
Max
0.41
1.00
2
Reverse Leakage
VR=50V
IR
0.1
Reverse Recover Time
IF=IR =10mA, IR(Rec)=1.0mA
Trr
5.0
Unit
Volts
mA
mA
C
C
Unit
Volts
Volts
PF
µAdc
nS
Device Marking
Item
BAS70
BAS70-05
BAS70-06
BAS70-04
Marking
73
75
76
74
Eqivalent Circuit diagram
3
1
3
1
2
3
1
2
3
1
2
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2