P6SMB Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – Surface Mount Transient Voltage Suppressor

P6SMB Series
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage: 6.8 to 600 V
Peak Pulse Power: 600 W
FEATURES
● Glass passivated chip
● _{600 W peak pulse power capability with a}
10/1000 μs waveform, repetitive rate (duty
cycle):0.01 %
● Low leakage
● Uni and Bidirectional unit
● Excellent clamping capability
● Very fast response time
● RoHS compliant
MECHANICAL DATA
● Case: Molded plastic
● Epoxy: UL 94V-0 rate flame retardant
● Lead: Solderable per MIL-STD-750, method
2026
● Polarity: Color band denotes cathode end
except Bipolar
● Mounting position: Any
[ ] ^{0.155 3.94}
0.13 3.30
SMB/ DO-214AA
[ ] ^{0.087 2.20}
0.077 1.96
[ ] ^{0.096 2.44}
0.084 2.13
[ ] ^{0.191 4.85}
0.171 4.35
[ ] ^{0.216 5.50}
0.201 5.10
[ ] ^{0.012 0.30}
0.006 0.15
[ ] ^{0.06 1.52}
0.03 0.75
[ ] ^{0.008 0.20}
0.001 0.02
Dimensions : inch [ mm ]
MAXIMUM RATINGS (⁽T_A==225°C unnless otherwiise nnotedd))
Parameter
Peak power dissipation with a 10/1000μs waveform⁽¹⁾
Peak pulse current wih a 10/1000μs waveform⁽¹⁾
Symbol
Value
P_PP
600
I_PP See Next Table
Power dissipation on infinite heatsink at T_L = 75 °C
P_D
5.0
Peak forward surge current, 8.3 ms single half sine-
wave unidirectional only⁽²⁾
I_FSM
100
Maximum instantaneous forward voltage at 25 A for
unidirectional only⁽³⁾
V_F
3.5/5.0
Operating junction and storage temperature range
Note:
T_J, T_STG –55 to +150
(1)Non-repetitive current pulse per Fig.5 and derated above T_A= 25 °C per Fig.1
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
(3)V_F<3.5V for devices of V_BR<200V and V_F<5.0V for devices of V_BR>201V
UNIT
W
A
W
A
V
°C
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