P4SMA Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – Surface Mount Transient Voltage Suppressor

P4SMA Series
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage: 6.8 to 600 V _{Peak Pulse Power: 400 W}
SMA/DO-214AC
.055(1.40)
.062(1.60)
.098(2.50)
.114(2.90)
.078(2.00)
.096(2.44)
.157(4.00)
.181(4.60)
.006(.152)
.012(.305)
.030(0.76)
.060(1.52)
.004(.102)
.008(.203)
.188(4.80)
.208(5.28)
Dimensions in inches and (millimeters)
FEATURES
● Glass passivated chip
● _{400 W peak pulse power capability with a}
10/1000 μs waveform, repetitive rate (duty
cycle):0.01 %
● Low leakage
● Uni and Bidirectional unit
● Excellent clamping capability
● Very fast response time
● RoHS compliant
MECHANICAL DATA
● Case: Molded plastic
● Epoxy: UL 94V-0 rate flame retardant
● Lead: Solderable per MIL-STD-750, method
2026
● Polarity: Color band denotes cathode end
except Bipolar
● Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^oC ambient temperature unless otherwise specified
Parameter
Symbol
Peak power dissipation with a 10/1000μs waveform⁽¹⁾
P_PP
Value
400
Peak pulse current wih a 10/1000μs waveform⁽¹⁾
I_PP See Next Table
Power dissipation on infinite heatsink at T_L = 75 °C
P_D
1.0
Peak forward surge current, 8.3 ms single half sine-
wave unidirectional only⁽²⁾
I_FSM
40
Maximum instantaneous forward voltage at 25 A for
unidirectional only⁽³⁾
V_F
3.5/5.0
Operating junction and storage temperature range
Note:
T_J, T_STG –55 to +150
(1)Non-repetitive current pulse per Fig.5 and derated above T_A= 25 °C per Fig.1
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3)V_F<3.5V for devices of V_BR<200V and V_F<5.0V for devices of V_BR>201V
UNIT
W
A
W
A
V
°C
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