FM120-N Datasheet, PDF (1/3 Pages) Formosa MS – Chip Schottky Barrier Diodes - Silicon epitaxial planer type

FM120-N THRU FM1100-N
CHIP SCHOTTKY BARRIER RECTIFIER
1.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V
SOD-323
0.106 (2.7)
0.091 (2.3)
0.012(0.3) Typ.
0.057 (1.45)
0.041 (1.05)
0.016(0.4) Typ.
0.047 (1.2)
0.031 (0.8)
0.016(0.4) Typ.
FEATURES
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Very tiny plastic SMD package.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
MECHANICAL DATA
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-323
• Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.008 gram
MAXIMUM RATING ^{(AT T}A^{=25oC unless otherwise noted)}
PARAMETER
Forward rectified current
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
See Fig.1
CONDITIONS
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V_R = V_RRM T_A = 25 ^OC
V_R = V_RRM T_A = 125 ^OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
I_O
1.0
A
I_FSM
30
A
I_R
R_èJA
C_J
T_STG
0.5
mA
10
90
O_C/W
120
pF
-65
+175 ^OC
SYMBOLS
FM120-N
FM130-N
FM140-N
FM150-N
FM160-N
FM180-N
FM1100-N
*1
V_RRM
(V)
20
30
40
50
60
80
100
*2
V_RMS
(V)
14
21
28
35
42
56
70
*3
V_R
(V)
20
30
40
50
60
80
100
*4
V_F
(V)
0.55
0.70
0.85
Operating
temperature
T_J, (^OC)
-55 to +125
-55 to +150
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1
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage