FFM101-MH Datasheet, PDF (1/2 Pages) Formosa MS – Chip Silicon Rectifier - Fast recovery type

FFM101-MH thru FFM107-MH
FAST SWITCHING SURFACE MOUNT RECTIFIER
VOLTAGE - 50 TO 1000 VOLTS CURRENT - 1.0 AMPERES
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ .
0.071(1.8)
0.055(1.4)
FEATURES
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Tiny plastic SMD package.
• High current capability.
• Fast switching for high efficiency.
• High surge current capability.
• Glass passivated chip junction.
• Lead-free parts meet RoHS requirments.
0.031(0.8) Typ .
0.039(1.0)
0.024(0.6)
0.031(0.8) Typ .
Dimensions in inches and (millimeters)
MECHANICAL DATA
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
• Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATIXGS ^{(AT T}A^{=25oC unless otherwise noted)}
PARAMETER
Forward rectified current
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
Maximum ratings (AT T_A=25^oC unless otherwise noted)
CONDITIONS
Symbol MIN. TYP.
Ambient temperature = 55^oC
I_O
MAX. UNIT
1.0
A
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V_R = V_RRM T_A = 25 ^OC
V_R = V_RRM T_A = 100 ^OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
I_FSM
25
A
5.0
I_R
uA
100
R_èJA
42
O_C/W
C_J
15
pF
T_STG
-65
+175 ^OC
SYMBOLS
FFM101-MH
FFM102-MH
FFM103-MH
FFM104-MH
FFM105-MH
FFM106-MH
FFM107-MH
*1
V_RRM
(V)
50
100
200
400
600
800
1000
*2
V_RMS
(V)
35
70
140
280
420
560
700
*3
V_R
(V)
50
100
200
400
600
800
1000
*4
V_F
(V)
1.30
*5
T_RR
(nS)
150
250
500
Operating
temperature
T_J, (^OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time
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