CD4148WP Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Small-Signal Chip Diode

CD4148WP
SMALL-SIGNAL CHIP DIODE
1206
.025(.635)
.085(2.16)
.067(1.70)
FEATURES
MECHANICAL DATA
This diode is also available other case styles
Including the 0805 case with the type designation
CD4148WSP, and the 0603 case with the type
Designation CD4148WTP
Silicon Epitaxial Planar Diode
Fast switching diode.
Case 1206
Weight Approx. 10mg
Marking Cathode band
Absolute Maxmum Ratings & Thermal Characteristics Tamb=25^oC, unless otherwise specified
PARAMETER
Reverse Voltage
Peak Reverse Voltage
Forward Continuous current
SYMBOL
VR
VRM
IFM
Average rectified current sin half wave rectification with
IF(AV)
resistive load f =50Hz
Surge Forward Current t 1S and TJ=25⁰C
IFSM
Power dissipation
Ptot
Typical Thermal Resistance Junction to Ambiant Air
R JA
Junction Temperature
TJ
Storage Temperature
TS
1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics Tamb=25^oC, unless otherwise specified
VALUE
75
100
300
1)
150
500
1)
400
1)
375
175
-65 to +175
UNITS
Volts
Volts
mA
mA
mA
mW
K/W
0_C
0_C
Forward voltage
Leakage current
PARAMETER
IF=10mA
VR=20V
VR=75V
VR=20V, TJ=150⁰C
SYMBOL
Min
VF
IR
Capacitance
VF=VR=0V
Ctot
Voltage rise when switching ON tested with 50mA pulses,
tp= 0.1us, rise time < 30ns
VFR
fp= (5 to 100) KHz
Reverse recovery time
Rectification efficiency
IF=10mA to IR=1mA,
VR=6V, RL=100
F=100MHz, VRF=2V
TRR
r
45
Max
UNIT
1.0
V
25
nA
5.0
uA
50
uA
4
pF
2.5
V
4
nS
%
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