SFH405 Datasheet, PDF (4/6 Pages) Siemens Semiconductor Group – GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Relative Spectral Emission
I_rel = f (λ)
100
%
Ι _rel
80
OHRD1938
60
40
20
0
880 920 960 1000 nm 1060
λ
Forward Current
I_F = f (V_F), Single pulse, t_p = 20 μs
10 ¹
Ι_F ^A
OHR01042
typ.
max.
10 ⁰
10 ^-1
SFH 405
Radiant
Intensity
Ι_e
Ι_e 100
mA
=
f
(I_F)
Single pulse, t_p = 20 μs
Ι_e ^{10 2}
Ι_e (100 mA)
OHR01039
10 ¹
10 ⁰
10 ^-1
10 ^-2
10 ^-1
10 ⁰ A 10 ¹
Ι_F
Permissible Pulse Handling
Capability I_F = f (τ), T_A = 25 °C,
duty cycle D = parameter
10 ¹
OHR02183
Ι_F A
D = 0,005
0,01
0,02
10 ⁰
0,05
0,1
0,2
τ
D=
τ
T
Ι_F
T
10^{-1 0,5}
DC
Max. Permissible Forward Current
I_F = f (T_A)
50
Ι _{F mA}
40
OHR00672
30
R _thJA = 950 K/W
20
R _thJL = 850 K/W
10
0
0 20 40 60 80 ˚C 100
T_A, T_L
10 ^-2 _{1 1.5 2 2.5 3 3.5 4 V 4.5}
V_F
Radiation Characteristics
Ι_rel = f (ϕ)
40
30
20
10
0
ϕ
1.0
50
0.8
10
-2
10
-5
10 ^-4
10 ^-3
10 ^-2
10 ^-1
10 ⁰
10 ¹
τ
OHR01886
60
0.6
70
0.4
80
0.2
90
0
100
1.0 0.8 0.6
0.4
0
20 40 60 80 100 120
2007-03-30
4