194170 Datasheet, PDF (1/1 Pages) OSA Opto Light GmbH – AlInGaP / GaAs LED Chips

RED
Item No.: 194170
1. This specification applies to AlInGaP / GaAs LED Chips
2. Structure
2.1 Mesa structure
2.2 Electrodes
p-side (anode)
n-side (cathode)
Au alloy or Al
Au alloy
3. Outlines (dimensions in microns)
265
120
250
265
n-Electrode
Epitaxy AlInGaP
p-Substrate GaAs
p-Electrode
Chip thickness could also be 180 µm or 210 µm
Wire-bond contacts can also be square
4. Electrical and optical characteristics (T=25°C)
Parameter
Symbol Conditions
Forward voltage
V_F
I_F = 20 mA
Reverse current
I_R
V_R = 5 V
Luminous intensity *
I_V
I_F = 20 mA
Peak wavelength
λ_p
I_F = 20 mA
Brightness measurement at OSA on gold plate
min
5. Packing
Dice on adhesive film with 1) wire-bond side on top
2) back contact on top
6. Labeling
Type
Lot No.
I_V typ
min
max
Quantity
typ
1,90
20
655
max
2,30
10
Unit
V
µA
mcd
nm
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