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193150 Datasheet, PDF (1/1 Pages) OSA Opto Light GmbH – GaAlAs / GaAlAs LED Chips
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Item No.: 193150
1. This specification applies to GaAlAs / GaAlAs LED Chips
2. Structure
2.1 Mesa structure
2.2 Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy or Al
3. Outlines (dimensions in microns)
260
260
120
180
n-Electrode
p-Electrode
Wire bond contacts can also be square
4. Electrical and optical characteristics (T=25°C)
Parameter
Symbol Conditions min typ max
Forward voltage
VF
IF = 20 mA
1,85
2,30
Reverse current
IR
VR = 5 V
10
Luminous intensity *
IV
IF = 20 mA
26,0
Peak wavelength
λP
IF = 20 mA
650
* On request, wafers will be delivered according to luminous intensity classes
Brightness measurement at OSA on gold plate
5. Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6. Labeling
Type
Lot No.
IV typ
min
max
Quantity
Unit
V
µA
mcd
nm
© 2004
OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com