190282 Datasheet, PDF (1/1 Pages) OSA Opto Light GmbH – AlInGaP / GaAs LED Chips

ORANGE
Item No.: 190282
1. This specification applies to AlInGaP / GaAs LED Chips
2. Structure
2.1 Mesa structure
2.2 Electrodes
p-side (anode)
n-side (cathode)
Au alloy or Al
Au alloy
3. Outlines (dimensions in microns)
235
110
250
p-Electrode
Epitaxy AlInGaP
n-Substrate GaAs
235
n-Electrode
Wire-bond contacts can also be square
4. Electrical and optical characteristics (T=25°C)
Parameter
Symbol Conditions min typ max
Forward voltage
V_F
I_F = 20 mA
2,10
2,40
Reverse current
I_R
V_R = 5 V
10
Luminous intensity *
I_V
I_F = 10 mA
55,0
dom. wavelength
λ_D
I_F = 20 mA
625
* On request, wafers will be delivered according to luminous intensity classes
Brightness measurement at OSA on gold plate
5. Packing
Dice on adhesive film with 1) wire-bond side on top
2) back contact on top
6. Labeling
Type
Lot No.
I_V typ
min
max
Quantity
Unit
V
µA
mcd
nm
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