170282 Datasheet, PDF (1/1 Pages) OSA Opto Light GmbH – AlInGaP / GaAs LED Chips

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Item No.: 170282
1. This specification applies to AlInGaP / GaAs LED Chips
2. Structure
2.1 Mesa structure
2.2 Electrodes
p-side (anode)
n-side (cathode)
Au alloy or Al
Au alloy
3. Outlines (dimensions in microns)
235
110
250
p-Electrode
Epitaxy AlInGaP
n-Substrate GaAs
235
n-Electrode
4. Electrical and optical characteristics (T=25°C)
Parameter
Symbol Conditions min typ max
Forward voltage
V_F
I_F = 20 mA
2,10
2,40
Reverse current
I_R
V_R = 5 V
10
Luminous intensity *
I_V
I_F = 10 mA
70
dom. wavelength
λ_D
I_F = 20 mA
590
* On request, wafers will be delivered according to luminous intensity classes
Brightness measurement at OSA on gold plate
5. Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6. Labeling
Type
Lot No.
I_V typ
min
max
Quantity
Unit
V
µA
mcd
nm
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